FPD2250DFN

Phone: +1 408 850-5790

http://www.filtronic.co.uk/semis.com

Revised: 11/14/05

Fax: +1 408 850-5766

Email: sales@filcsi.com

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Parameter

Symbol

Test Conditions

Min

Max

Units

Drain-Source Voltage

8

V

Gate-Source Voltage

-3

V

Drain-Source Current

mA

Gate Current

Forward or reverse current

22

mA

RF Input Power

2

Under any acceptable bias state

525

mW

Channel Operating Temperature

Under any acceptable bias state

175

ºC

Storage Temperature

Non-Operating Storage

-40

150

ºC

Total Power Dissipation

See De-Rating Note below

3.0

W

Gain Compression

Comp.

Under any bias conditions

5

dB

Simultaneous Combination of Limits

3

2 or more Max. Limits

80

%

Notes:

•

Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.

•

•

Total Power Dissipation to be de-rated as follows above 22

°C:

(coefficient of de-rating formula is the Thermal Conductivity)

Example: For a 65

°C package lead temperature: P

•

The use of a filled via-hole directly beneath the exposed heatsink tab on the bottom of the package is strongly

recommended to provide for adequate thermal management.

Ideally the bottom of the circuit board is

affixed to a heatsink or thermal radiator.

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HANDLING PRECAUTIONS

To avoid damage to the devices care should be exercised during handling. Proper Electrostatic

Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and

testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model.

Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.

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APPLICATIONS NOTES & DESIGN DATA

Applications Notes are available from your local Filtronic Sales Representative or directly from the

factory.

Complete design data, including S-parameters, noise data, and large-signal models are

available on the Filtronic web site. Evaluation Boards available upon request.