FPD2250DFN

•

PERFORMANCE (1850 MHz)

♦ 29 dBm Output Power (P

♦ 16.5 dB Small-Signal Gain (SSG)

♦ 1.0 dB Noise Figure

♦ 42 dBm Output IP3

♦ 50% Power-Added Efficiency

♦ Evaluation Boards Available

♦ Featuring Lead Free Finish Package

•

DESCRIPTION AND APPLICATIONS

The FPD2250DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron

Mobility Transistor (pHEMT). It utilizes a 0.25

μm x 1500 μm Schottky barrier Gate, defined by

high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes

parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a

range of bias conditions and input power levels. The FPD2250DFN is available in die form and in

other packages.

Typical applications include drivers or output stages in PCS/Cellular base station high-intercept-

point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.

•

ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL

Power at 1dB Gain Compression

28

29

dBm

Small-Signal Gain

SSG

15

16.5

dB

Power-Added Efficiency

PAE

50

%

Noise Figure

NF

1.0

0.8

1.75

dB

Output Third-Order Intercept Point

IP3

Matched for optimal power

Matched for best IP3

42

43

dBm

Saturated Drain-Source Current

560

700

825

mA

Maximum Drain-Source Current

1.1

A

Transconductance

600

mS

Gate-Source Leakage Current

1

10

μA

Pinch-Off Voltage

0.7

1.0

1.3

V

Gate-Source Breakdown Voltage

12

16

V

Gate-Drain Breakdown Voltage

12

16

V

Phone: +1 408 850-5790

http://www.filtronic.co.uk/semis.com

Revised: 11/14/05

Fax: +1 408 850-5766

Email: sales@filcsi.com