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LP4935T1G 数据表(PDF) 2 Page - Leshan Radio Company

部件名 LP4935T1G
功能描述  P-Channel MOSFET Low RDS(on) trench technology.
PDF  5 Pages
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制造商  LRC [Leshan Radio Company]
网页  http://www.lrc.cn/
标志 LRC - Leshan Radio Company

LP4935T1G 数据表(HTML) 2 Page - Leshan Radio Company

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LP4935T1G
Dual P-Channel MOSFET
5. ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown Voltage
(ID =-250µA, VGS =0V)
Zero Gate Voltage Drain Current
(VDS =-24V, VGS =0V)
(VDS =-24V, VGS =0V,TJ = 55°C)
Gate-Body Leakage
(VDS = 0 V, VGS = ±20 V)
Gate-Source Threshold Voltage
(VDS = VGS , ID = 250 uA)
On-State Drain Current
(VGS =-10V, VDS =-5V)
Drain-Source On-Resistance
(VGS =-10V, ID =-4.1A)
(VGS =-4.5V, ID =-3A)
Forward Transconductance
(VDS =-5V, ID =-4A)
Diode Forward Voltage
(IS =-1A,VGS =0V)
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge(10V)
Total Gate Charge(4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Body Diode Reverse Recovery Time
(IF =-4A, dI/dt=100A/µs)
Body Diode Reverse Recovery Charge
(IF =-4A, dI/dt=100A/µs)
BVDSS
Symbol
Unit
Static
VGS(th)
V
-1
-1.4
-2.5
(VGS =0V, VDS
=-15V, f=1MHz)
Ciss
515
660
725
pF
Coss
70
100
130
Crss
60
80
110
Dynamic
A
Characteristic
nA
(VGS =-10V, VDS
=-15V, RL =3.6
Ω,RGEN =3Ω)
td(on)
-
39
-
ns
tr
-
21
-
td(off)
-
48
-
tf
-
7
-
IGSS
±100
S
-
10
-
-1
-
-
RDS(on)
mΩ
50
70
IDSS
µA
ID(on)
gfs
Min.
Typ.
V
-
-0.77
-1
-
38
-
45
-
-
VSD
-5
Max.
Qg
9.4
V
-30
-
-
IS
-2
A
-25
-
-
-
-
trr
Qrr
ns
39
nC
11.3
Ω
(VGS =-10V, VDS
=-15V, ID =-4A)
nC
18.7
Gate resistance
(VGS =0V, VDS =0V, f=1MHz)
Rg
3.5
7.5
11.5
Qgs
2.7
Qg
Qgd
3.3
Leshan Radio Company, LTD.
2/5
Rev.B Nov. 2019



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