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LP4935T1G 数据表(PDF) 3 Page - Leshan Radio Company |
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LP4935T1G 数据表(HTML) 3 Page - Leshan Radio Company |
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3 / 5 page ![]() Dual P-Channel MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES Leshan Radio Company, LTD. 3/5 17 5 2 10 0 18 40 0 5 10 15 20 25 30 0.5 1.5 2.5 3.5 4.5 5.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 10 20 30 40 50 60 70 80 02 46 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 25°C 125°C 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) VGS=-4.5V ID=-3A VGS=-10V ID=-4A 20 40 60 80 100 120 24 68 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 25°C 125°C VDS=-5V VGS=-4.5V VGS=-10V ID=-4A 25°C 125°C 0 5 10 15 20 25 30 01 23 45 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=-3.5V -4V -6V -10V -4.5V LP4935T1G Rev.B Nov. 2019 |
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