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LP4935T1G 数据表(PDF) 4 Page - Leshan Radio Company |
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LP4935T1G 数据表(HTML) 4 Page - Leshan Radio Company |
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4 / 5 page ![]() Dual P-Channel MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) Leshan Radio Company, LTD. 4/5 0 2 4 6 8 10 02468 10 Q g (nC) Figure 7: Gate-Charge Characteristics 0 200 400 600 800 0 5 10 15 20 25 30 -V DS (Volts) Figure 8: Capacitance Characteristics Ciss Coss Crss VDS=-15V ID=-4A 0 10 20 30 40 0.0001 0.01 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to- Ambient (Note F) TA=25°C 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 µs 10s 1ms DC RDS(ON) limited TJ(Max)=150°C TA=25°C 100 µs 10ms 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Single Pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA Ton T PD In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=125°C/W LP4935T1G Rev.B Nov. 2019 |
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