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HMA82GS6AFR8N-TF 数据表(PDF) 7 Page - Hynix Semiconductor

部件名 HMA82GS6AFR8N-TF
功能描述  DDR4 SDRAM SO-DIMM Based on 8Gb A-die
PDF  73 Pages
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制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor

HMA82GS6AFR8N-TF 数据表(HTML) 7 Page - Hynix Semiconductor

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Rev. 1.4 / Sep.2017
7
A0 - A16
Input
Address Inputs: Provide the row address for ACTIVATE Commands and the column
address for Read/Write commands to select one location out of the memory array in the
respective bank. A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, and WE_n/A14 have
additional functions. See other rows. The address inputs also provide the op-code during
Mode Register Set commands.
A10 / AP
Input
Auto-precharge: A10 is sampled during Read/Write commands to determine whether
Autoprecharge should be performed to the accessed bank after the Read/Write
operation. (HIGH: Autoprecharge; LOW: no Autoprecharge). A10 is sampled during a
Precharge command to determine whether the Precharge applies to one bank (A10
LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected
by bank addresses.
A12 / BC_n
Input
Burst Chop: A12/BC_n is sampled during Read and Write commands to determine if
burst chop (on-the-fly) will be performed. (HIGH, no burst chop; LOW: burst chopped).
See command truth table for details.
RESET_n
CMOS
Input
Active Low Asynchronous Reset: Reset is active when RESET_n is LOW, and inactive
when RESET_n is HIGH. RESET_n must be HIGH during normal operation.
DQ
Input /
Output
Data Input/ Output: Bi-directional data bus. If CRC is enabled via Mode register then
CRC code is added at the end of Data Burst. Any DQ from DQ0-DQ3 may indicate the
internal Vref level during test via Mode Register Setting MR4 A4=High. Refer to vendor
specific data sheets to determine which DQ is used.
DQS_t, DQS_c,
Input /
Output
Data Strobe: output with read data, input with write data. Edge-aligned with read data,
centered in write data. DDR4 SDRAMs support differential data strobe only and does not
support single-ended.
PARITY
Input
Command and Address Parity Input : DDR4 Supports Even Parity check in DRAMs with
MR setting. Once it’s enabled via Register in MR5, then DSRAM calculates Parity with
ACT_n, RAS_n/A16, CAS_n/A15, WE_n/A14, BG0-BG1, BA0-BA1, A16-A0. Input parity
should be maintained at the rising edge of the clock and at the same time with
command & address with CS_n LOW.
ALERT_n
Output
ALERT: It has multiple functions, such as CRC error flag or Command and Address Parity
error flag, as an Output signal. If there is an error in CRC, then ALERT_n goes LOW for
the period time interval and goes back HIGH. If there is an error in Command Address
Parity Check, then ALERT_n goes LOW for relatively long period until on going DRAM
internal recovery transaction is complete.
During Connectivity Test mode, this pin functions as an input.
Use of this signal or not is dependent on the system.
SA0-SA1
Input Device address for the SPD.
RFU
Reserved for Future Use. No on DIMM electrical connection is present.
NC
No Connect: No on DIMM electrical connection is present.
VDD1
Supply Power Supply: 1.2 V +/- 0.06 V
VSS
Supply Ground
VTT2
Supply Power Supply : 0.6V
Symbol
Type
Function



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