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HMA82GS6AFR8N-TF 数据表(PDF) 7 Page - Hynix Semiconductor |
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HMA82GS6AFR8N-TF 数据表(HTML) 7 Page - Hynix Semiconductor |
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7 / 73 page ![]() Rev. 1.4 / Sep.2017 7 A0 - A16 Input Address Inputs: Provide the row address for ACTIVATE Commands and the column address for Read/Write commands to select one location out of the memory array in the respective bank. A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, and WE_n/A14 have additional functions. See other rows. The address inputs also provide the op-code during Mode Register Set commands. A10 / AP Input Auto-precharge: A10 is sampled during Read/Write commands to determine whether Autoprecharge should be performed to the accessed bank after the Read/Write operation. (HIGH: Autoprecharge; LOW: no Autoprecharge). A10 is sampled during a Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected by bank addresses. A12 / BC_n Input Burst Chop: A12/BC_n is sampled during Read and Write commands to determine if burst chop (on-the-fly) will be performed. (HIGH, no burst chop; LOW: burst chopped). See command truth table for details. RESET_n CMOS Input Active Low Asynchronous Reset: Reset is active when RESET_n is LOW, and inactive when RESET_n is HIGH. RESET_n must be HIGH during normal operation. DQ Input / Output Data Input/ Output: Bi-directional data bus. If CRC is enabled via Mode register then CRC code is added at the end of Data Burst. Any DQ from DQ0-DQ3 may indicate the internal Vref level during test via Mode Register Setting MR4 A4=High. Refer to vendor specific data sheets to determine which DQ is used. DQS_t, DQS_c, Input / Output Data Strobe: output with read data, input with write data. Edge-aligned with read data, centered in write data. DDR4 SDRAMs support differential data strobe only and does not support single-ended. PARITY Input Command and Address Parity Input : DDR4 Supports Even Parity check in DRAMs with MR setting. Once it’s enabled via Register in MR5, then DSRAM calculates Parity with ACT_n, RAS_n/A16, CAS_n/A15, WE_n/A14, BG0-BG1, BA0-BA1, A16-A0. Input parity should be maintained at the rising edge of the clock and at the same time with command & address with CS_n LOW. ALERT_n Output ALERT: It has multiple functions, such as CRC error flag or Command and Address Parity error flag, as an Output signal. If there is an error in CRC, then ALERT_n goes LOW for the period time interval and goes back HIGH. If there is an error in Command Address Parity Check, then ALERT_n goes LOW for relatively long period until on going DRAM internal recovery transaction is complete. During Connectivity Test mode, this pin functions as an input. Use of this signal or not is dependent on the system. SA0-SA1 Input Device address for the SPD. RFU Reserved for Future Use. No on DIMM electrical connection is present. NC No Connect: No on DIMM electrical connection is present. VDD1 Supply Power Supply: 1.2 V +/- 0.06 V VSS Supply Ground VTT2 Supply Power Supply : 0.6V Symbol Type Function |
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