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HMA82GS6AFR8N-TF 数据表(PDF) 41 Page - Hynix Semiconductor |
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HMA82GS6AFR8N-TF 数据表(HTML) 41 Page - Hynix Semiconductor |
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41 / 73 page ![]() Rev. 1.4 / Sep.2017 41 Single-ended AC & DC Output Levels of Connectivity Test Mode Following output parameters will be applied for DDR4 SDRAM Output Signal during Connectivity Test Mode. NOTE : 1. The effective test load is 50 terminated by VTT = 0.5 * VDDQ. Differential Output Slew Rate Definition of Connectivity Test Mode Single-ended AC & DC output levels of Connectivity Test Mode Symbol Parameter DDR4-1600/1866/2133/ 2400/2666/3200 Unit Note VOH(DC) DC output high measurement level (for IV curve linearity) 1.1 x VDDQ V VOM(DC) DC output mid measurement level (for IV curve linearity) 0.8 x VDDQ V VOL(DC) DC output low measurement level (for IV curve linearity) 0.5 x VDDQ V VOB(DC) DC output below measurement level (for IV curve linearity) 0.2 x VDDQ V VOH(AC) AC output high measurement level (for output SR) VTT + (0.1 x VDDQ)V 1 VOL(AC) AC output below measurement level (for output SR) VTT - (0.1 x VDDQ)V 1 Single-ended output slew rate of Connectivity Test Mode Parameter Symbol DDR4-1600/1866/2133/2400/2666/3200 Unit Note Min Max Output signal Falling time TF_output_CT - 10 ns/V Output signal Rising time TR_output_CT - 10 ns/V VOH(AC) TR_output_CT VTT 0.5 * VDDQ VOL(AC) TF_output_CT |
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