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IS25LP064A-RBLA2 数据表(PDF) 55 Page - Integrated Silicon Solution, Inc

部件名 IS25LP064A-RBLA2
功能描述  3V SERIAL FLASH MEMORY WITH 133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE
PDF  99 Pages
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制造商  ISSI [Integrated Silicon Solution, Inc]
网页  http://www.issi.com
标志 ISSI - Integrated Silicon Solution, Inc

IS25LP064A-RBLA2 数据表(HTML) 55 Page - Integrated Silicon Solution, Inc

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IS25LP064A/032A
Integrated Silicon Solution, Inc.- www.issi.com
55
Rev. A
11/06/2015
8.22 ENTER DEEP POWER DOWN (DP, B9h)
The Enter Deep Power-down (DP) instruction is for setting the device on the minimizing the power consumption
(enter into Power-down mode). During this mode, standby current is reduced from Isb1 to Isb2. While in the
Power-down mode, the device is not active and all Write/Program/Erase instructions are ignored. The instruction
is initiated by driving the CE# pin low and shifting the instruction code into the device. The CE# pin must be
driven high after the instruction has been latched, or Power-down mode will not engage. Once CE# pin driven
high, the Power-down mode will be entered within the time duration of tDP. While in the Power-down mode only
the Release from Power-down/RDID instruction, which restores the device to normal operation, will be
recognized. All other instructions are ignored, including the Read Status Register instruction which is always
available during normal operation. Ignoring all but one instruction makes the Power Down state a useful
condition for securing maximum write protection. It is available in both SPI and QPI mode.
Figure 8.36 Enter Deep Power Down Mode Sequence
Instruction = B9h
CE #
SCK
SI
0
1
2
3
4
5
6
7
Mode 3
Mode 0
tDP
SO
High Impedance
Figure 8.37 Enter Deep Power Down Mode QPI Sequence
B9h
CE#
SCK
IO[3:0]
0
1
Mode 3
Mode 0
tDP



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