JS28F128P30T85 datasheet(29/102 Pages) INTEL

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1-Gbit P30 Family

Datasheet

Intel StrataFlash® Embedded Memory (P30)

April 2005

Order Number: 306666, Revision: 001

5.0

Maximum Ratings and Operating Conditions

5.1

Absolute Maximum Ratings

Warning:

Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage.

These are stress ratings only.

Parameter

Maximum Rating

Notes

Temperature under bias

–40 °C to +85 °C

Storage temperature

–65 °C to +125 °C

Voltage on any signal (except VCC, VPP)

–0.5 V to +4.1 V

VPP voltage

–0.2 V to +10 V

2,3,4

VCC voltage

–0.2 V to +2.5 V

VCCQ voltage

–0.2 V to +4.1 V

Output short circuit current

100 mA

Notes:

Temperature for 1-Gbit SCSP is –30 °C to +85 °C.

Voltages shown are specified with respect to VSS. Minimum DC voltage is –0.5 V on input/output

signals and –0.2 V on VCC, VCCQ, and VPP. During transitions, this level may undershoot to –2.0 V for

periods < 20 ns. Maximum DC voltage on VCC is VCC + 0.5 V, which, during transitions, may

overshoot to VCC + 2.0 V for periods < 20 ns. Maximum DC voltage on input/output signals and VCCQ

is VCCQ + 0.5 V, which, during transitions, may overshoot to VCCQ + 2.0 V for periods < 20 ns.

Maximum DC voltage on VPP may overshoot to +11.5 V for periods < 20 ns.

Program/erase voltage is typically 1.7 V – 2.0 V. 9.0 V can be applied for 80 hours maximum total, to

any blocks for 1000 cycles maximum. 9.0 V program/erase voltage may reduce block cycling

capability.

Output shorted for no more than one second. No more than one output shorted at a time.

JS28F128P30T85 数据表(PDF) 29 Page - Intel Corporation

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