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2N60LL-TN3-R 数据表(PDF) 4 Page - VBsemi Electronics Co.,Ltd

部件名 2N60LL-TN3-R
功能描述  N-Channel 650 V (D-S) MOSFET
PDF  9 Pages
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.com
标志 VBSEMI - VBsemi Electronics Co.,Ltd

2N60LL-TN3-R 数据表(HTML) 4 Page - VBsemi Electronics Co.,Ltd

  2N60LL-TN3-R Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd 2N60LL-TN3-R Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd 2N60LL-TN3-R Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd 2N60LL-TN3-R Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd 2N60LL-TN3-R Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd 2N60LL-TN3-R Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd 2N60LL-TN3-R Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd 2N60LL-TN3-R Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd 2N60LL-TN3-R Datasheet HTML 9Page - VBsemi Electronics Co.,Ltd  
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Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
0
100
200
300
400
500
1
10
100
1000
DS
V
, Drain-to-Source Voltage (V)
A
V
= 0V,
f = 1MHz
C
= C
+ C
, C
SHORTED
C
= C
C
= C
+ C
GS
iss
gs
gd
ds
rss
gd
oss
ds
gd
iss
oss
rss
0
10
20
30
40
50
0
4
8
12
16
20
Q , Total Gate Charge (nC)
G
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
3.2 A
V
= 130V
DS
V
= 325V
DS
V
= 520V
DS
0.1
1
5
10
0.2
0.4
0.6
0.8
1.0
1.2
V
,Source-to-Drain Voltage (V)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
0.1
1
5
10
10
100
1000
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V
, Drain-to-Source Voltage (V)
DS
10us
100us
1ms
10ms
www.VBsemi.tw
E-mail：China@VBsemi TEL:86-755-83251052
2N60LL-TN3-R
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