| 数据搜索系统,热门电子元器件搜索 |
|
2N60LL-TN3-R 数据表(PDF) 7 Page - VBsemi Electronics Co.,Ltd |
|
|
|||||||||||||||||||||||||||||
2N60LL-TN3-R 数据表(HTML) 7 Page - VBsemi Electronics Co.,Ltd |
|
7 / 9 page ![]() Fig. 14 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 V* VDD ISD Driver gate drive D.U.T. ISD waveform D.U.T. VDS waveform Inductor crurent D = P.W. Period + - + + + - - - * VGS = 5 V for logic level devices Peak Diode Recovery dV/dt Test Circuit RG VDD • dV/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by duty factor "D" • D.U.T. - device under test D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer www.VBsemi.tw E-mail:China@VBsemi TEL:86-755-83251052 2N60LL-TN3-R 7 |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |