2N60LL-TN3-R datasheet(1/9 Pages) VBSEMI

部件名	2N60LL-TN3-R

功能描述	N-Channel 650 V (D-S) MOSFET

PDF	9 Pages

Scroll/Zoom	100%

制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

标志

1 / 9 page

FEATURES

• Low Gate Charge Qg Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

and Current

• Compliant to RoHS directive 2002/95/EC

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 3.2 A (see fig. 12).

c. ISD ≤ 3.2 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

e. Drain current limited by maximum junction temperature.

PRODUCT SUMMARY

VDS (V)

650

RDS(on) (Ω)VGS = 10 V

3.8

Qg (Max.) (nC)

15

Qgs (nC)

3

Qgd (nC)

6

Configuration

Single

Available

RoHS

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

650

V

Gate-Source Voltage

VGS

± 30

Continuous Drain Currente

VGS at 10 V

TC = 25 °C

ID

A

Continuous Drain Current

TC = 100 °C

1.6

Pulsed Drain Currenta

IDM

8.0

Linear Derating Factor

0.48

W/°C

Single Pulse Avalanche Energyb

EAS

165

mJ

Repetitive Avalanche Currenta

IAR

2

A

Repetitive Avalanche Energya

EAR

4

Maximum Power Dissipation

TC = 25 °C

PD

60

W

Peak Diode Recovery dV/dtc

dV/dt

2.8

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)d

for 10 s

300

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

S

N-Channel MOSFET

G

D

TO-252

GD

S

Top View

2.0

mJ

N-Channel

650 V (D-S)MOSFET

www.VBsemi.tw

E-mail：China@VBsemi TEL:86-755-83251052

2N60LL-TN3-R

1

类似零件编号 - 2N60LL-TN3-R

制造商	部件名	数据表	功能描述
Unisonic Technologies	2N60LL-TN3-R	190Kb / 6P	2A, 600V N-CHANNEL POWER MOSFET
Unisonic Technologies	2N60LL-TN3-R	235Kb / 7P	N-CHANNEL POWER MOSFET
SHENZHEN DOINGTER SEMIC...	2N60LL-TN3-R	1Mb / 5P	N-Channel MOSFET uses advanced trench technology

More results

类似说明 - 2N60LL-TN3-R

制造商	部件名	数据表	功能描述
Analog Power	AM12N65P	332Kb / 5P	N-Channel 650-V (D-S) MOSFET
VBsemi Electronics Co.,...	UD01N65	1Mb / 9P	N-Channel 650 V (D-S) MOSFET
	TSM13N50CIC0	1Mb / 8P	N-Channel 650 V (D-S) MOSFET
	TSM15N50CIC0	1Mb / 8P	N-Channel 650 V (D-S) MOSFET
	SPP1N60C3	1Mb / 8P	N-Channel 650 V (D-S) MOSFET
	SPP04N60C2	1Mb / 9P	N-Channel 650 V (D-S) MOSFET
	SPP11N60CFD	1Mb / 8P	N-Channel 650 V (D-S) MOSFET
	TSM2NB60CPROG	1Mb / 9P	N-Channel 650 V (D-S) MOSFET
	SSD02N60SL	1Mb / 9P	N-Channel 650 V (D-S) MOSFET
	SSD02N65SL	1Mb / 9P	N-Channel 650 V (D-S) MOSFET