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STSPIN830 数据表(PDF) 15 Page - STMicroelectronics |
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STSPIN830 数据表(HTML) 15 Page - STMicroelectronics |
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15 / 27 page  Figure 10. Thermal shutdown management V EN FAULT VIH V RELEASE VIL T j T jSD TjSD,hyst Thermal shutdown V EN\FAULT FAULT_MCU MCU DEVICE EN_MCU RELEASE EN OC\SC THSD FAULT CEN REN Power stage ENABLED DISABLED DISABLED ENABLED t THSD AM040386 RELEASE 5.4.3 Blanking time The device provides a blanking time tBLANK after each power MOSFET commutation to prevent false triggering of protections and current limiter. During blanking time the protections (overcurrent, short circuit, thermal shutdown) and the comparator of the current limiter are inhibit. 5.5 ESD protection strategy Figure 11. ESD protection strategy INx 5 V Internal Reg. GND INx = ENW\INWL, INW\INWH, ENV\INVL, ENU\INUL, INU\INUH, MODE, STBY\RESET, EN\FAULT, REF, TOFF 5V ESD Active Clamp INV\INVH OUTU/V/W Below GND 48V ESD Active Clamp POWER PCH POWER NCH VS GND SENSEU SENSEW SNS SENSEV STSPIN830 ESD protection strategy DS12584 - Rev 2 page 15/27 |
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