TN2501 datasheet(2/14 Pages) MICROCHIP

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TN2501

DS20005948A-page 2

 2018 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings†

Drain-to-Source Voltage ...................................................................................................................................... BVDSS

Drain-to-Gate Voltage ......................................................................................................................................... BVDGS

Gate-to-Source Voltage ......................................................................................................................................... ±20V

Operating Ambient Temperature, TA ................................................................................................... –55°C to +150°C

Storage Temperature, TS ..................................................................................................................... –55°C to +150°C

† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only, and functional operation of the device at those or any other conditions above those

indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for

extended periods may affect device reliability.

DC ELECTRICAL CHARACTERISTICS

Electrical Specifications: TA = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless

otherwise stated. (Pulse test: 300 µs pulse, 2% duty cycle)

Parameter

Sym.

Min. Typ. Max.

Unit

Conditions

Drain-to-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 1 mA

Gate Threshold Voltage

VGS(th)

0.3

—

VGS = VDS, ID = 1 mA

Change in VGS(th) with Temperature

∆VGS(th)

—

–4

mV/°C

VGS = VDS, ID = 1 mA

(Note 1)

Gate Body Leakage Current

IGSS

—

100

VGS = ±15V, VDS = 0V

Zero-Gate Voltage Drain Current

IDSS

—

µA

VGS = 0V,

VDS = Maximum rating

—

VDS = 0.8 Maximum rating,

VGS = 0V, TA = 125°C

(Note 1)

On-State Drain Current

ID(ON)

250

600

—

VGS = VDS = 3V

Static Drain-to-Source On-State Resistance

RDS(ON)

—

Ω

VGS = 1.2V, ID = 3 mA

—

3.5

Ω

VGS = 2V, ID = 50 mA

—

2.5

Ω

VGS = 3V, ID = 200 mA

Change in RDS(ON) with Temperature

∆RDS(ON)

—

0.75

%/°C

VGS = 3V, ID = 200 mA

(Note 1)

Note 1: Specification is obtained by characterization and is not 100% tested.

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