TN2501 datasheet(3/14 Pages) MICROCHIP

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AC ELECTRICAL CHARACTERISTICS

Electrical Specifications: TA = 25°C unless otherwise specified. All AC parameters are sample tested.

Parameter

Sym. Min. Typ. Max.

Unit

Conditions

Forward Transconductance

GFS

150

300

—

mmho VDS = 3V, ID = 200 mA

Input Capacitance

CISS

—

110

VGS = 0V,

VDS = 15V,

f = 1 MHz

Common Source Output Capacitance

COSS

—

Reverse Transfer Capacitance

CRSS

—

Turn-On Delay Time

td(ON)

—

VDD = 15V,

ID = 250 mA,

RGEN = 25Ω

Rise Time

—

Turn-Off Delay Time

td(OFF) —

—

Fall Time

—

DIODE PARAMETER

Diode Forward Voltage Drop

VSD

—

1.1

1.8

VGS = 0V, ISD = 200 mA (Note 1)

Reverse Recovery Time

trr

—

100

—

VGS = 0V, ISD = 200 mA

Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated.



(Pulse test: 300 µs pulse, 2% duty cycle)

TEMPERATURE SPECIFICATIONS

Parameter

Sym. Min. Typ. Max.

Unit

Conditions

TEMPERATURE RANGE

Operating Ambient Temperature

–55

—

+150

°C

Storage Temperature

–55

—

+150

°C

PACKAGE THERMAL RESISTANCE

3-lead SOT-89

JA

—

133

—

°C/W

THERMAL CHARACTERISTICS

Package

ID (Note 1)

(Continuous)

(mA)

(Pulsed)

(mA)

Power Dissipation

at TA = 25°C

(Note 2)

(W)

IDR (Note 1)

(mA)

IDRM

(mA)

3-lead SOT-89

400

560

1.6

400

560

Note 1: ID (continuous) is limited by maximum rated TJ.

2: TA = 25°C. Mounted on an FR4 Board, 25 mm x 25 mm x 1.57 mm.

 2018 Microchip Technology Inc.

DS20005948A-page 3

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