 2018 Microchip Technology Inc.

DS20005948A-page 1

TN2501

Features

• Low Threshold

• High Input Impedance

• 110 pF Maximum Low-Input Capacitance

• Fast Switching Speeds

• Low On-Resistance

• Free from Secondary Breakdown

• Low Input and Output Leakage

Applications

• Logic-Level Interfaces (Ideal for TTL and CMOS)

• Solid-State Relays

• Battery-Operated Systems

• Photovoltaic Drives

• Analog Switches

• General Purpose Line Drivers

• Telecommunication Switches

General Description

The

TN2501

low-threshold

Enhancement-mode

(normally-off) transistor uses a vertical Diffusion Metal

Oxide Semiconductor (DMOS) structure and a

well-proven silicon-gate manufacturing process. This

combination produces a device with the power

handling capabilities of bipolar transistors and the high

input impedance and positive temperature coefficient

inherent

in

Metal-Oxide

Semiconductor

(MOS)

devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally

induced secondary breakdown.

Microchip’s vertical DMOS Field-Effect Transistors

(FETs) are ideally suited to a wide range of switching

and amplifying applications where very low threshold

voltage,

high

breakdown

voltage,

high

input

impedance, low input capacitance and fast switching

speeds are desired.

Package Type

See Table 3-1 for pin information.

3-lead SOT-89

(Top view)

GATE

SOURCE

DRAIN

DRAIN

N-Channel Enhancement-Mode Vertical DMOS FET