80N08G-TA3-R datasheet(4/8 Pages) VBSEMI

4 / 8 page

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

Safe Operating Area, Junction-to-Ambient

0.001

0.01

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

SD - Source-to-Drain Voltage (V)

J = 150 °C

J = 25 °C

- 1.0

- 0.7

- 0.4

- 0.1

0.2

0.5

- 50

- 25

100

125

150

J - Temperature (°C)

D = 250 μA

D = 5 mA

0.000

0.010

0.020

0.030

0.040

0.050

GS - Gate-to-Source Voltage (V)

J = 125 °C

J = 25 °C

D = 20 A

100

200

300

400

500

0.001

0.01

0.1

Time (s)

0.01

0.1

100

1000

0.01

0.1

100

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

100 ms

Limited by R

DS(on)*

1 ms

DM Limited

A = 25 °C

Single Pulse

BVDSS Limited

10 ms

10 s

1 s

D Limited

100 μs

www.VBsemi.tw

E-mail：China@VBsemi TEL:86-755-83251052

80N08G-TA3-R

80N08G-TA3-R 数据表(PDF) 4 Page - VBsemi Electronics Co.,Ltd

80N08G-TA3-R 数据表(HTML) 4 Page - VBsemi Electronics Co.,Ltd

Html Pages

1 2 3 4 5 6 7 8

数据表下载

链接网址

80N08G-TA3-R 数据表(PDF) 4 Page - VBsemi Electronics Co.,Ltd

80N08G-TA3-R 数据表(HTML) 4 Page - VBsemi Electronics Co.,Ltd

Html Pages

1 2 3 4 5 6 7 8

数据表 下载

链接网址

数据表下载