80N08G-TA3-R datasheet(1/8 Pages) VBSEMI

部件名	80N08G-TA3-R

功能描述	N-Channel 80 V (D-S) MOSFET

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制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

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N-Channel 80 V (D-S) MOSFET

FEATURES

• TrenchFET® Power MOSFET

• 100 % Rg and UIS Tested

APPLICATIONS

• Primary Side Switching

• Synchronous Rectification

• DC/AC Inverters

• LED Backlighting

Notes

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

PRODUCT SUMMARY

VDS (V)

RDS(on) () Max.

ID (A)

Qg (Typ.)

80

0.0065at VGS = 10 V

17.1 nC

0.0070at VGS = 6.0 V

7

5

0.0085at VGS = 4.5 V

65

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

80

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

A

TC = 70 °C

65

TA = 25 °C

28.6b, c

TA = 70 °C

24.9b, c

Pulsed Drain Current (t = 100 μs)

IDM

350

Continuous Source-Drain Diode Current

TC = 25 °C

IS

TA = 25 °C

4.5b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

30

Single Pulse Avalanche Energy

EAS

45

mJ

Maximum Power Dissipation

TC = 25 °C

PD

180

W

TC = 70 °C

120

TA = 25 °C

5b, c

TA = 70 °C

3.2b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

260

80

8

0

TO-220AB

Top View

GD S

a

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

 10 sec

RthJA

15

18

°C/W

Steady State

40

50

Maximum Junction-to-Case

RthJC

0.85

1.1

a

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80N08G-TA3-R

1

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