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80N08G-TA3-R 数据表(PDF) 3 Page - VBsemi Electronics Co.,Ltd

部件名 80N08G-TA3-R
功能描述  N-Channel 80 V (D-S) MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.com
标志 VBSEMI - VBsemi Electronics Co.,Ltd

80N08G-TA3-R 数据表(HTML) 3 Page - VBsemi Electronics Co.,Ltd

  80N08G-TA3-R Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd 80N08G-TA3-R Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd 80N08G-TA3-R Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd 80N08G-TA3-R Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd 80N08G-TA3-R Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd 80N08G-TA3-R Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd 80N08G-TA3-R Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd 80N08G-TA3-R Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
20
40
60
80
100
0.0
1.0
2.0
3.0
4.0
5.0
V
DS - Drain-to-Source Voltage (V)
V
GS = 4 V
V
GS = 3 V
V
GS = 10 V thru 7V
V
GS = 6 V
0.0050
0.0070
0.0090
0.0110
0.0130
0.0150
0
20
40
60
80
100
I
D - Drain Current (A)
V
GS = 4.5 V
V
GS = 6.0 V
V
GS = 10 V
0
2
4
6
8
10
0
8
16
24
32
40
Q
g - Total Gate Charge (nC)
V
DS = 40 V
V
DS = 60 V
V
DS = 20 V
I
D = 10 A
0
20
40
60
80
100
120
0.0
1.8
3.6
5.4
7.2
9.0
V
GS - Gate-to-Source Voltage (V)
T
C = 25 °C
T
C = 125 °C
T
C = - 55 °C
0
1000
2000
3000
4000
5000
0
12
24
36
48
60
V
DS - Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.5
0.8
1.1
1.4
1.7
2.0
- 50
- 25
0
25
50
75
100
125
150
T
J - Junction Temperature (°C)
I
D = 20 A
V
GS = 10 V
V
GS = 6V
www.VBsemi.tw
E-mail：China@VBsemi TEL:86-755-83251052
80N08G-TA3-R
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