1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

One Watt Amplifier Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

MPSW55

MPSW56

Unit

Collector – Emitter Voltage

VCEO

–60

–80

Vdc

Collector – Base Voltage

VCBO

–60

–80

Vdc

Emitter – Base Voltage

VEBO

–4.0

Vdc

Collector Current — Continuous

IC

–500

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

1.0

8.0

Watt

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

2.5

20

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

125

°C/W

Thermal Resistance, Junction to Case

RqJC

50

°C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage(1)

(IC = –1.0 mAdc, IB = 0)

MPSW55

MPSW56

V(BR)CEO

–60

–80

—

—

Vdc

Emitter – Base Breakdown Voltage

(IE = –100 mAdc, IC = 0)

V(BR)EBO

–4.0

—

Vdc

Collector Cutoff Current

(VCE = –40 Vdc, IB = 0)

MPSW55

(VCE = –60 Vdc, IB = 0)

MPSW56

ICES

—

—

–0.5

–0.5

µAdc

Collector Cutoff Current

(VCB = –40 Vdc, IE = 0)

MPSW55

(VCB = –60 Vdc, IE = 0)

MPSW56

ICBO

—

—

–0.1

–0.1

µAdc

Emitter Cutoff Current

(VEB = –3.0 Vdc, IC = 0)

IEBO

—

–0.1

µAdc

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MPSW55/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MPSW55

MPSW56

*Motorola Preferred Device

CASE 29–05, STYLE 1

TO–92 (TO–226AE)

1

2

3

*

COLLECTOR

3

2

BASE

1

EMITTER