MPSW55 MPSW56

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

IC, COLLECTOR CURRENT (mA)

Figure 4. Base–Emitter Temperature Coefficient

–0.8

–2.8

–1.0

–100

–10

θVB for VBE

–0.5

–2.0

–5.0

–20

–50

–200

–1.2

–1.6

–2.0

–2.4

–500

Figure 5. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

–100

–50

–20

–10

–5.0

–2.0

–1.0

–0.5

–0.2

–0.1

100

70

50

30

20

5.0

TJ = 25°C

Cobo

Cibo

10

7.0

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

–2 k

–1.0

MPSW55

–2.0

–5.0

Figure 6. Current–Gain — Bandwidth Product

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

–500

–200

–100

–50

–20

–10

–10

–20

–60 –80 –100

MPSW56

100

µs

1.0 ms

1.0 s

TC = 25°C

TA = 25°C

dc

dc

–1 k

DUTY CYCLE

≤ 10%

IC, COLLECTOR CURRENT (mA)

–200

–70

–50

–30

–20

–10

–7.0

–5.0

–3.0

–2.0

200

100

70

50

20

VCE = –2.0 V

TJ = 25°C

–100

30

Figure 7. Active Region — Safe Operating

Area