MPSW55 MPSW56

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(1)

DC Current Gain

(IC = –50 mAdc, VCE = –1.0 Vdc)

(IC = –250 mAdc, VCE = –1.0 Vdc)

hFE

100

50

—

—

—

Collector – Emitter Saturation Voltage

(IC = –250 mAdc, IB = –10 mAdc)

VCE(sat)

—

–0.5

Vdc

Base–Emitter On Voltage

(IC = –250 mAdc, VCE = –5.0 Vdc)

VBE(on)

—

–1.2

Vdc

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product

(IC = –250 mAdc, VCE = –5.0 Vdc, f = 20 MHz)

fT

50

—

MHz

Output Capacitance

(VCB = –10 Vdc, f = 1.0 MHz)

Cobo

—

15

pF

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

400

–0.5

–0.7

–1.0

–2.0

–3.0

–5.0

–7.0

–10

–20

–30

–50

–70

–100

–200

200

100

80

60

40

TJ = 125°C

25

°C

–55

°C

VCE = –1.0 V

–300

–500

IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

–1.0

–0.8

–0.6

–0.4

–0.2

0

–0.1

–10

–1.0

TJ = 25°C

IC = –10 mA

–0.05

–0.2

–0.5

–2.0

–5.0

–20

–50

–100 mA

–250 mA

–500 mA

–50

mA

IC, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltages

–1.0

–0.8

–0.6

–0.4

–0.2

0

TJ = 25°C

VBE(on) @ VCE = –1.0 V

VCE(sat) @ IC/IB = 10

–0.5

VBE(sat) @ IC/IB = 10

–1.0

–2.0

–5.0

–10

–20

–50

–100 –200

–500