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ADP1074ARWZ-R7 数据表(PDF) 4 Page - Analog Devices |
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ADP1074ARWZ-R7 数据表(HTML) 4 Page - Analog Devices |
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4 / 32 page ![]() ADP1074 Data Sheet Rev. D | Page 4 of 32 SPECIFICATIONS VIN = 24 V, VDD2 = 12 V, TJ = −40°C to +125°C, unless otherwise noted. Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit SUPPLY (PRIMARY) Supply Voltage VIN 4.7 μF capacitor from VIN to PGND1, 1 μF capacitor from VREG1 to PGND1 4.7 24 60 V Quiescent Supply Current IVIN VIN > VIN UVLO, NGATE and PGATE unloaded At 100 kHz 5.3 mA At 300 kHz 5.8 mA At 600 kHz 6.8 mA VIN > VIN UVLO, NGATE and PGATE loaded with 2.2 nF and 410 pF, respectively At 100 kHz 7.5 mA At 300 kHz 12 mA At 600 kHz 19.5 mA VIN Shutdown Current EN pin voltage (VEN) < 1.2 V, VREG1 = 0 V, VIN = 60 V 55 μA (VIN + VREG1) Start-Up Current IVIN_STARTUP VEN < 1.2 V, VREG1 = 12 V, VIN = 12 V 160 μA VIN UVLO VIN rising 4.7 V VIN falling 4.0 V UVLO Hysteresis 0.19 V Time from EN High to PGATE Output Switching VEN > 1.2 V, 1 μF capacitor on VREG1 1 ms Time from EN Low to SR1/SR2 Output Stops Switching VEN < 1.0 V, 1 μF capacitor on VREG1 1 μs SUPPLY (SECONDARY) Supply Voltage VDD2 4.7 μF capacitor from VDD2 to PGND2, 1 μF capacitor from VREG2 to PGND2 4.5 12 36 V Quiescent Supply Current IDD2 SR1 and SR2 unloaded At 100 kHz 6.5 mA At 300 kHz 6.7 mA At 600 kHz 7 mA IDD2 SR1 and SR2 loaded with 2.2 nF At 100 kHz 8.3 mA At 300 kHz 12 mA At 600 kHz 18 mA VDD2 UVLO Threshold VDD2 rising 3.55 V VDD2 falling 3.0 V UVLO Hysteresis 0.145 V Secondary UVLO Hiccup Time 200 ms OSCILLATOR Switching Frequency (fS) RT resistance (RRT) = 480 kΩ (±1%) 50 − 10% 50 50 + 10% kHz RRT = 240 kΩ (±1%) 100 − 10% 100 100 + 10% kHz RRT = 120 kΩ (±1%) 200 − 10% 200 200 + 10% kHz RRT = 80 kΩ (±1%) 300 − 10% 300 300 + 10% kHz RRT = 60 kΩ (±1%) 400 − 10% 400 400 + 10% kHz RRT = 40 kΩ (±1%) 600 − 10% 600 600 + 10% kHz VREG1 PIN VREG1 Voltage Clamp VREG1 current (IVREG1) = 3 mA, VEN < 1.2 V 13.5 14.3 15.2 V VREG1 Clamp Series Resistance VREG1 forced current of 5 mA and 15 mA 16 Ω |
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