AF9903M

2N and 2P-Channel Enhancement Mode Power MOSFET

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of

this product. No rights under any patent accompany the sale of the product.

Rev. 1.0 Sep 22, 2005

1/8

Features

- Simple Drive Requirement

- Low On-Resistance

- Full Bridge Application on LCD Monitor Inverter

- Pb Free Plating Product

Product Summary

CH

N

35

48

4.3

P

-35

72

-3.6

Pin Assignments

SO-8

5

6

7

8

4

3

2

1

P1G

P1S/P2S

N2D/P2D

P2G

N1G

N1D/P1D

N1S/N2S

N2G

General Description

The advanced power MOSFET provides the designer

with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The SO-8 package is universally preferred for all

commercial-industrial surface mount applications and

suited for low voltage applications such as DC/DC

converters.

Pin Descriptions

Pin Name

Description

N1G

Gate (NMOS1)

N1D/P1D

Drain(NMOS1) / Drain(PMOS1)

N1S/N2S

Source(NMOS1) / Source(NMOS2)

N2G

Gate (NMOS2)

P2G

Gate (PMOS2)

N2D/P2D

Drain(NMOS2) / Drain(PMOS2)

P1S/P2S

Source(PMOS1) / Source(PMOS2)

P1G

Gate (PMOS1)

Ordering information

A X 9903M X X

PN

Package

Feature

F :MOSFET

S: SO-8

Packing

Blank : Tube or Bulk

A : Tape & Reel

Block Diagram

P1S

P2S

N1S

N2S

N2G

N1G

P1G

P2G

P1N1D

P2N2D