AF9903M

2N and 2P-Channel Enhancement Mode Power MOSFET

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Seo 22, 2005

2/8

Absolute Maximum Ratings

Symbol

Parameter

N-Channel P-Channel

Units

Drain-Source Voltage

35

-35

Gate-Source Voltage

±20

±20

V

4.3

-3.6

3.4

-2.8

A

20

-20

A

Total Power Dissipation

1.38

W

Linear Derating Factor

0.01

W/ºC

Storage Temperature Range

-55 to 150

ºC

Operating Junction Temperature Range

-55 to 150

ºC

Thermal Data

Symbol

Parameter

Value

Units

Max.

90

ºC/W

Limits

Symbol

Parameter

Test Conditions

CH

Min.

Typ.

Max.

Unit

N

35

-

-

Drain-Source breakdown Voltage

P

-35

-

-

V

Reference to 25 ºC,

N

-

0.03

-

Breakdown Voltage Temperature

Coefficient

Reference to 25 ºC,

P

-

-0.02

-

V/ºC

-

-

48

N

-

-

70

-

-

72

Static Drain-Source

P

-

-

100

mΩ

N

1

-

3

Gate-Threshold Voltage

P

-1

-

-3

V

N

-

8

-

Forward Transconductance

P

-

6

-

S

-

-

1

N

-

-

25

-

-

-1

Drain-Source Leakage

Current

P

-

-

-25

uA

N

-

-

±100

Gate-Source Leakage

P

-

-

±100

nA

N

-

6

10

P

-

6

10

N

-

2

-

Gate-Source Charge

P

-

1

-

N

-

3

-

Gate-Drain (“Miller”) Charge

N-Channel

P-Channel

P

-

3

-

nC