AF9903M

2N and 2P-Channel Enhancement Mode Power MOSFET

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Seo 22, 2005

3/8

Limits

Symbol

Parameter

Test Conditions

CH

Min.

Typ.

Max.

Unit

N

-

6

-

P

-

7

-

N

-

5

-

Rise Time

P

-

5

-

N

-

14

-

Turn-Off Delay Time

P

-

19

-

N

-

4

-

Fall-Time

N-Channel

P-Channel

P

-

4

-

ns

N

-

490

780

Input Capacitance

P

-

420

1100

N

-

130

-

Output Capacitance

P

-

140

-

N

-

55

-

Reverse Transfer Capacitance

N-Channel

f=1.0MHz

P-Channel

f=1.0MHz

P

-

65

-

pF

Source-Drain Diode

Limits

Symbol

Parameter

Test Conditions

CH

Min.

Typ.

Max.

Unit

N

-

-

1.2

P

-

-

-1.2

V

N

-

18

-

Reverse Recovery Time

P

-

20

-

ns

N

-

11

-

Reverse Recovery Charge

N-Channel

dl/dt=100A/µs

P-Channel

dl/dt=-100A/µs

P

-

16

-

nC

Note 1: Surface Mounted on 1 in

Note 2: Pulse width limited by Max. junction temperature

Note 3: Pulse width < 300us, duty cycle < 2%.