| 数据搜索系统,热门电子元器件搜索 |
|
FTK830P 数据表(PDF) 7 Page - First Silicon Co., Ltd |
|
|
|||||||||||||||||||||||||||||
FTK830P 数据表(HTML) 7 Page - First Silicon Co., Ltd |
|
7 / 8 page ![]() TYPICAL PERFORMANCE CUVES (Cont.) MOSFET 2007. 12. 18 7/8 FTK830P / F Revision No : 0 Gate to Source Voltage, VGS (V) 2 5 7 TRANSFER CHARACTERISTICS 0 6 1 0 1 2 3 4 5 4 3 Case Temperature, TC ( C) 4 DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 0 0 8 6 4 2 8 Junction Temperature, TJ ( C) -20 60 NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 0 2 100 -60 0 6 1 1 4 1 8 2 2 20 Junction Temperature, TJ ( C) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 0 75 1 25 0 85 0 95 1 05 1 15 CAPACITANCE vs DRAIN TO SOURCE VOLTAGE Drain to Source Voltage, VDS (V) 0 1 400 800 2000 20 50 CRSS 1600 1200 10 30 30 Drain Current, ID (A) 2 TRANSCONDUCTANCE vs DRAIN CURRENT 0 1 0 1 2 3 4 5 TJ=125 C TJ=25 C TJ=-40 C 10 16 12 20 0 80 120 -40 40 140 -20 60 100 20 0 80 120 -40 40 140 160 5 4 3 Pulse Duration = 80μs Duty Cycle = 0.5% Max VDS>ID(ON)×RDS(ON)MAX Pulse Duration = 80μs Duty Cycle = 0.5% Max VGS=10V VGS=20V Pulse Duration= 80 μs Duty Cycle = 0 5% Max VGS =10V, ID=2 5A ID=250μs CISS COSS VGS = 0V, f = 1MHz CISS = CGS + C GD CRSS = CGD COSS = CDS + CGS Pulse Duration= 80 μs Duty Cycle = 0.5% Max TJ=125 C TJ=25 C TJ=-40 C |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |