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FTK830P 数据表(PDF) 3 Page - First Silicon Co., Ltd |
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FTK830P 数据表(HTML) 3 Page - First Silicon Co., Ltd |
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3 / 8 page ![]() MOSFET 2007. 12. 18 3/8 FTK830P / F Revision No : 0 ELECTRICAL CHARACTERISTICS (Cont.) VSD TJ = 25°C, ISD = 5A, VGS = 0V 1.5 V ISD 5.5 A ISDM 18 A tRR 250 ns QRR TJ = 25°C, ISD = 5A, dlSD/dt ==100 A/µs 5.0 µC Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below. PARAMETER SYMBOL TEST CONDITIONS MIN TYP UNIT SOURCE TO DRAIN DIODE SPECIFICATIONS Source to Drain Diode Voltage (Note 1) Continuous Source to Drain Current Pulse Source to Drain Current Reverse Recovery Time Reverse Recovery Charge MAX Note 2 |
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