MOSFET

ABSOLUTE MAXIMUM RATINGS

PARAMET

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

500

V

500

V

Gate to Source Voltage

±30

V

Continuous

5.0

A

Drain Current

3.0

20

A

93

W

Maximum Power Dissipation

Derating above 25˚C

0.6

W/˚C

Single Pulse Avalanche Energy Rating

290

Note: 1. Signified recommend operating range that indicates conditions for which the device is intended to be

functional, but does not guarantee specific performance limits.

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

UNIT

62.5

Thermal Resistance Junction-Ambient

1.67

Thermal Resistance Junction-Case

˚C / W

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

UNIT

500

V

Drain-Source Breakdown Voltage

4.0

µ

A

Gate to Threshold Voltage

A

On-State Drain Current (Note 1)

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

2.5

1

V

Drain to Source On Resistance

(Note 2)

10

Ω

Forward Transconductance

(Note 2)

4.2

pF

Turn-On Delay Time

30

pF

Rise Time

(Note 2)

50

2007. 12. 18

2/8

FTK830P / F

Revision No : 0

-55 ~ +150

˚C

MAX

Storage Temperature

Turn-Off Delay Time

ns

Fall Time

50

Gate to Source Charge

6

nC

Gate to Drain “Miller” Charge

11

nC

Total Gate Charge

Input Capacitance

700

nC

RATINGS

1.15

S

100

27

+150

˚C

Junction Temperature

Pulsed

mJ

A

Output Capacitance

Reverse - Transfer Capacitance

2.0

4.5

15

90

±100

1.5

70

110

110

900

210

35

20

120

µ

A

nA

ns

ns

pF

ns

Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

2. MOSFET Switching Times are Essentially Independent of Operating Temperature.

3. Gate Charge is Essentially Independent of Operating Temperature.