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ADRF5300BCCZN-R7 数据表(PDF) 8 Page - Analog Devices

部件名 ADRF5300BCCZN-R7
功能描述  Silicon, SPDT Switch, Reflective, 24 GHz to 32 GHz
PDF  11 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADRF5300BCCZN-R7 数据表(HTML) 8 Page - Analog Devices

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ADRF5300
Data Sheet
Rev. 0 | Page 8 of 11
THEORY OF OPERATION
The ADRF5300 incorporates a driver to perform logic functions
internally and to provide the user with the advantage of a
simplified positive voltage control interface. The driver features
a single digital control input pin (CTRL) that controls the state
of the RF paths. The logic level applied to the CTRL pin
determines which RF port is in the insertion loss state and
which port is in the isolation state (see Table 7).
RF INPUT AND OUTPUT
All of the RF ports (RFC, RF1, and RF2) are dc-coupled to 0 V.
When the RF line potential is equal to 0 V, no dc blocking
capacitor is required at the RF ports.
The RF ports are internally matched to 50 Ω. Therefore,
external matching networks are not required.
The ADRF5300 is bidirectional with equal power handling
capabilities. An RF input signal (RFIN) can be applied to the
RFC port, RF1 port, or RF2 port.
The insertion loss path conducts the RF signal between the
selected RF throw port and the RF common port. The isolation
path provides high loss between the insertion loss path and the
unselected, reflective RF throw port.
POWER SUPPLY
The ADRF5300 operates on a positive single supply and
includes an NVG with ultralow spurious performance.
Bypassing capacitors are recommended on the supply lines to
filter high frequency noise.
The power-up sequence is as follows:
1. Connect GND to ground.
2. Power up the supply input, VDD.
3. Apply the digital control input, CTRL. Applying CTRL
before applying the VDD supply inadvertently forward
biases and damages the internal ESD protection structures.
To avoid this damage, use a series 1 kΩ resistor to limit the
current flowing into the CTRL pin. Pull the CTRL pin to
VDD or GND using a resistor if the controller output is in
a high impedance state after VDD is powered up and the
CTRL pin is not driven to a valid logic state.
4. Apply the RF input signal.
The power-down sequence is the reverse order of the power-up
sequence.
TIMING REQUIREMENTS
There are timing requirements for the proper operation of the
bias and control circuits. See Table 2 for the timing specifications.
See Figure 14 for the timing requirements.
After VDD reaches the operating range, tPOWERUP defines the wait
time before the recommended maximum RF power can be applied.
During this time, a maximum of 10 dBm RF input power can
be applied.
The minimum wait time before switching states is defined by tHOLD.
The maximum rise and fall time of the CTRL pulse is defined
by tSLEW.
VDD
VDD
GND
HIGH
LOW
CTRL
RFC
RF1
RF2
tHOLD
tSLEW
tPOWERUP
Figure 14. Timing Requirements
Table 7. Control Voltage Truth Table
Digital Control Input
RF Paths
CTRL
RF1 to RFC
RF2 to RFC
High
Insertion loss (on)
Isolation (off)
Low
Isolation (off)
Insertion loss (on)



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