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ADRF5300BCCZN-R7 数据表(PDF) 8 Page - Analog Devices |
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ADRF5300BCCZN-R7 数据表(HTML) 8 Page - Analog Devices |
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8 / 11 page ![]() ADRF5300 Data Sheet Rev. 0 | Page 8 of 11 THEORY OF OPERATION The ADRF5300 incorporates a driver to perform logic functions internally and to provide the user with the advantage of a simplified positive voltage control interface. The driver features a single digital control input pin (CTRL) that controls the state of the RF paths. The logic level applied to the CTRL pin determines which RF port is in the insertion loss state and which port is in the isolation state (see Table 7). RF INPUT AND OUTPUT All of the RF ports (RFC, RF1, and RF2) are dc-coupled to 0 V. When the RF line potential is equal to 0 V, no dc blocking capacitor is required at the RF ports. The RF ports are internally matched to 50 Ω. Therefore, external matching networks are not required. The ADRF5300 is bidirectional with equal power handling capabilities. An RF input signal (RFIN) can be applied to the RFC port, RF1 port, or RF2 port. The insertion loss path conducts the RF signal between the selected RF throw port and the RF common port. The isolation path provides high loss between the insertion loss path and the unselected, reflective RF throw port. POWER SUPPLY The ADRF5300 operates on a positive single supply and includes an NVG with ultralow spurious performance. Bypassing capacitors are recommended on the supply lines to filter high frequency noise. The power-up sequence is as follows: 1. Connect GND to ground. 2. Power up the supply input, VDD. 3. Apply the digital control input, CTRL. Applying CTRL before applying the VDD supply inadvertently forward biases and damages the internal ESD protection structures. To avoid this damage, use a series 1 kΩ resistor to limit the current flowing into the CTRL pin. Pull the CTRL pin to VDD or GND using a resistor if the controller output is in a high impedance state after VDD is powered up and the CTRL pin is not driven to a valid logic state. 4. Apply the RF input signal. The power-down sequence is the reverse order of the power-up sequence. TIMING REQUIREMENTS There are timing requirements for the proper operation of the bias and control circuits. See Table 2 for the timing specifications. See Figure 14 for the timing requirements. After VDD reaches the operating range, tPOWERUP defines the wait time before the recommended maximum RF power can be applied. During this time, a maximum of 10 dBm RF input power can be applied. The minimum wait time before switching states is defined by tHOLD. The maximum rise and fall time of the CTRL pulse is defined by tSLEW. VDD VDD GND HIGH LOW CTRL RFC RF1 RF2 tHOLD tSLEW tPOWERUP Figure 14. Timing Requirements Table 7. Control Voltage Truth Table Digital Control Input RF Paths CTRL RF1 to RFC RF2 to RFC High Insertion loss (on) Isolation (off) Low Isolation (off) Insertion loss (on) |
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