Silicon, SPDT Switch, Reflective,

24 GHz to 32 GHz

Data Sheet

ADRF5300

Rev. 0

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FEATURES

Reflective design

Low insertion loss: 1.1 dB

High isolation: 38 dB

High input linearity

P0.1dB: 37 dBm

IP3: 65 dBm

High RF input power handling

28 dBm average

36 dBm peak

3.3 V single-supply operation

Internal negative voltage generator

RF settling time (0.1 dB final RF output): 70 ns

20-terminal, 3 mm × 3 mm, RoHS-compliant, land grid array

package

APPLICATIONS

Industrial scanner

Test instrumentation

Cellular infrastructure: 5G millimeter wave

Military radios, radars, electronic counter measures (ECMs)

Microwave radios and very small aperture terminals (VSATs)

FUNCTIONAL BLOCK DIAGRAM

RF2

RF1

RFC

GND

CTRL

VDD

DRIVER

NVG

ADRF5300

Figure 1.

GENERAL DESCRIPTION

The ADRF5300 is a reflective, SPDT switch manufactured in

the silicon process.

The ADRF5300 is developed for 5G applications ranging from

24 GHz to 32 GHz. The ADRF5300 has a low insertion loss of

1.1 dB, a high isolation of 38 dB, and an RF input power

handling capability of 28 dBm average and 36 dBm peak.

The ADRF5300 incorporates a negative voltage generator (NVG)

to the VDD pin. The device employs CMOS- and low voltage

transistor to transistor logic (LVTTL)-compatible controls.

The ADRF5300 is packaged in a 20-terminal, 3 mm × 3 mm,

RoHS-compliant, land grid array (LGA) package and can

operate from −40°C to +105°C.