GENERAL DESCRIPTION
The ADRF5301 is a reflective, SPDT switch manufactured in the
silicon process. The ADRF5301 was developed for 5G applications from 37 GHz
to 49 GHz. This device has a low insertion loss of 1.4 dB, high
isolation of 30 dB, and RF input power handling capability of 28
dBm average and 36 dBm peak.
The ADRF5301 incorporates a negative voltage generator (NVG) to
operate with a single positive supply of 3.3 V applied to the VDD
pin. The device employs complementary metal-oxide semiconductor
(CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible
control. The ADRF5301 comes in a 20-terminal, 3 mm × 3 mm, RoHS-compliant,
land grid array package and can operate from −40°C to +105°C.

FEATURES
► Reflective design
► Low insertion loss: 1.4 dB typical
► High isolation: 30 dB typical
► High input linearity:
► P0.1dB: 36 dBm
► Input IP3: 52 dBm
► High RF power handling
► 28 dBm average
► 36 dBm peak
► Single-supply operation: 3.3V
► Internal NVG
► RF settling time (0.1 dB final RF output): 50 ns
► 20-terminal, 3 mm × 3 mm, land grid array (LGA) package

APPLICATIONS
► Industrial scanner
► Test instrumentation
► Cellular infrastructure mmWave 5G
► Military radios, radars, electronic counter measures (ECMs)
► Microwave radios and very small aperture terminals (VSATs)