Data Sheet

ADRF5301

Silicon, SPDT Switch, 37 GHz to 49 GHz

Rev. 0

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FEATURES

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Reflective design

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Low insertion loss: 1.4 dB typical

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High isolation: 30 dB typical

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High input linearity:

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P0.1dB: 36 dBm

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Input IP3: 52 dBm

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High RF power handling

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28 dBm average

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36 dBm peak

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Single-supply operation: 3.3V

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Internal NVG

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RF settling time (0.1 dB final RF output): 50 ns

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20-terminal, 3 mm × 3 mm, land grid array (LGA) package

APPLICATIONS

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Industrial scanner

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Test instrumentation

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Cellular infrastructure mmWave 5G

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Military radios, radars, electronic counter measures (ECMs)

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Microwave radios and very small aperture terminals (VSATs)

FUNCTIONAL BLOCK DIAGRAM

Figure 1. Functional Block Diagram

GENERAL DESCRIPTION

The ADRF5301 is a reflective, SPDT switch manufactured in the

silicon process.

The ADRF5301 was developed for 5G applications from 37 GHz

to 49 GHz. This device has a low insertion loss of 1.4 dB, high

isolation of 30 dB, and RF input power handling capability of 28

dBm average and 36 dBm peak.

The ADRF5301 incorporates a negative voltage generator (NVG) to

operate with a single positive supply of 3.3 V applied to the VDD

pin. The device employs complementary metal-oxide semiconduc-

tor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-com-

patible control.

The ADRF5301 comes in a 20-terminal, 3 mm × 3 mm, RoHS-com-

pliant, land grid array package and can operate from −40°C to

+105°C.