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ADRF5301BCCZN-R7 数据表(PDF) 3 Page - Analog Devices

部件名 ADRF5301BCCZN-R7
功能描述  Silicon, SPDT Switch, 37 GHz to 49 GHz
PDF  10 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADRF5301BCCZN-R7 数据表(HTML) 3 Page - Analog Devices

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Data Sheet
ADRF5301
SPECIFICATIONS
analog.com
Rev. 0 | 3 of 10
Supply voltage (VDD) = 3.3 V, CTRL voltage (VCTRL) = 0 V or VDD, TCASE = +25°C, 50 Ω system, unless otherwise noted.
Table 1. Electrical Characteristics
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
FREQUENCY RANGE
37
49
GHz
INSERTION LOSS
Between RFC and RF1/RF2
1.4
dB
ISOLATION
Between RFC and RF1/RF2
30
dB
Between RF1 and RF2
30
dB
RETURN LOSS
RFC and RF1/RF2 (On)
15
dB
SWITCHING CHARACTERISTICS
Rise and Fall Time
tRISE, tFALL
10% to 90% of RF output
10
ns
On and Off Time
tON, tOFF
50% VCTL to 90% of RF output
45
ns
RF Settling Time
0.1 dB
50% VCTL to 0.1 dB of final RF output
50
ns
0.05 dB
50% VCTL to 0.05 dB of final RF output
55
ns
INPUT LINEARITY
f = 37 GHz to 40 GHz
0.1 dB Power Compression
P0.1dB
36
dBm
Third-Order Intercept
IP3
Two-tone input power = 20 dBm per tone, Δf = 1 MHz
52
dBm
SUPPLY CURRENT
IDD
450
µA
DIGITAL CONTROL INPUTS
CTRL pin
Voltage
Low
VINL
0
0.8
V
High
VINH
1.2
3.3
V
Current
Low
IINL
<1
μA
High
IINH
14
µA
RECOMMENDED OPERATING CONDITONS
Supply Voltage
VDD
3.15
3.45
V
Digital Control Voltage
VCTRL
0
VDD
V
RF Input Power1
PIN
f = 37 GHz to 40 GHz, TCASE = +85 °C2
Average
28
dBm
Peak
100 ns pulse width, 2% duty cycle
36
dBm
Case Temperature
TCASE
−40
+105
°C
1 For power derating over frequency, see Figure 2.
2 For operation at +105°C, the power handling degrades from the TCASE = +85°C specification by 3 dB.
TIMING SPECIFICATIONS
See Figure 13 for the timing diagram.
Table 2. Timing Specifications
Parameter
Description
Min
Typ
Max
Unit
tPOWERUP1
Minimum wait time after power-up
50
μs
tHOLD
Minimum control switching time
40
μs
tSLEW
Maximum control rise and fall time
10
μs
1 A maximum of 10 dBm RF input power can be applied during the tPOWERUP wait time.



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