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ADRF5301BCCZN-R7 数据表(PDF) 8 Page - Analog Devices

部件名 ADRF5301BCCZN-R7
功能描述  Silicon, SPDT Switch, 37 GHz to 49 GHz
PDF  10 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADRF5301BCCZN-R7 数据表(HTML) 8 Page - Analog Devices

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Data Sheet
ADRF5301
THEORY OF OPERATION
analog.com
Rev. 0 | 8 of 10
The ADRF5301 integrates a driver to perform logic functions inter-
nally and to provide the user with the advantage of a simplified
control interface. The driver features a single digital control input
pin, CTRL, which controls the state of the RF paths. The logic level
applied to the CTRL pin determines which RF port is in the insertion
loss state while the other path is in the isolation state (see Table 7).
RF INPUT AND OUTPUT
All of the RF ports (RFC, RF1, and RF2) are DC-coupled to 0 V,
and no DC blocking is required at the RF ports when the RF line
potential is equal to 0 V.
The RF ports are internally matched to 50 Ω. Therefore, external
matching networks are not required.
The ADRF5301 is bidirectional with equal power handling capabili-
ties. The RF input signal can be applied to the RFC port or the
selected RF throw port.
The insertion loss path conducts the RF signal between the select-
ed RF throw port and the RF common port. The isolation paths
provide high loss between the insertion loss path and the unselect-
ed RF throw port that is reflective.
POWER SUPPLY
The ADRF5301 integrates a negative voltage generator (NVG)
and requires a single positive supply voltage applied to the VDD
pin. Bypassing capacitors are recommended on the supply line to
minimize RF coupling.
The ideal power-up sequence is as follows:
1. Connect GND reference.
2. Power-up supply input VDD.
3. Apply digital control input CTRL. Applying the CTRL control
before applying the VDD supply inadvertently forward biases
and damages the internal ESD protection structures. To avoid
this damage, use a series 1 kΩ resistor to limit the current
flowing into the control pin. Use pull-up or pull-down resistors if
the controller output is in a high-impedance state after VDD is
powered up and the control pins are not driven to a valid logic
state.
4. Apply RF input signal.
The ideal power-down sequence is the reverse order of the power-
up sequence.
TIMING REQUIREMENTS
There are timing requirements for the proper operation of the bias
and control circuits. See Table 2 for the timing specifications. See
Figure 13 for the timing requirements.
After VDD reaches the operating range, tPOWERUP defines the wait
time before the recommended maximum RF power can be applied.
During this time, a maximum of 10 dBm RF input power can be
applied.
The minimum wait time before switching states is defined by tHOLD.
The maximum rise and fall time of the CTRL pulse is defined by
tSLEW.
Figure 13. Timing Requirements
Table 7. Control Voltage Truth Table
Digital Control Input
RF Paths
CTRL
RF1 to RFC
RF2 to RFC
High
Insertion loss (on)
Isolation (off)
Low
Isolation (off)
Insertion loss (on)



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