© Semiconductor Components Industries, LLC, 2016

June, 2020 − Rev. 14

1

Publication Order Number:

BAS21HT1/D

High Voltage

Switching Diode

BAS21H

Features

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

250

V

Repetitive Peak Reverse Voltage

250

V

Peak Forward Current

200

mA

Repetitive Peak Forward Current

500

mA

Non−Repetitive Peak Forward Surge

Current, 60 Hz

2.5

A

Non−Repetitive Peak Forward Current

surge)

t = 1 ms

t = 10 ms

t = 100 ms

t = 1 ms

t = 1 s

20

20

10

4

1

A

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board,

Derate above 25°C

200

1.57

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient

Junction−to−Lead

Junction−to−Top

635

240

436

°C/W

Junction and Storage Temperature

Range

−55 to

+150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 Minimum Pad

HIGH VOLTAGE

SWITCHING DIODE

Device

Package

ORDERING INFORMATION

SOD−323

CASE 477

STYLE 1

1

CATHODE

2

ANODE

www.onsemi.com

MARKING

DIAGRAM

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

BAS21HT1G,

NSVBAS21HT1G

SOD−323

(Pb−Free)

3000 / Tape & Reel

JS M G

G

1

2

JS

= Device Code

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending up-

on manufacturing location.

BAS21HT3G,

NSVBAS21HT3G

SOD−323

(Pb−Free)

10000 / Tape &

Reel