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BAS21HT1G 数据表(PDF) 2 Page - ON Semiconductor |
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BAS21HT1G 数据表(HTML) 2 Page - ON Semiconductor |
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2 / 5 page ![]() BAS21H www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) IR − − 0.1 100 mAdc Reverse Breakdown Voltage (IBR = 100 mAdc) V(BR) 250 − Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF − − 1000 1250 mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 W) trr − 50 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr +10 V 2.0 k 820 W 0.1 mF D.U.T. VR 100 mH 0.1 mF 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE tr tp t 10% 90% IF IR trr t iR(REC) = 3.0 mA OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) IF INPUT SIGNAL Figure 1. Recovery Time Equivalent Test Circuit |
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