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BAS21HT1G 数据表(PDF) 3 Page - ON Semiconductor |
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BAS21HT1G 数据表(HTML) 3 Page - ON Semiconductor |
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3 / 5 page ![]() BAS21H www.onsemi.com 3 TYPICAL CHARACTERISTICS Figure 2. Forward Voltage Figure 3. Reverse Leakage FORWARD CURRENT (mA) 7000 REVERSE VOLTAGE (V) 5000 3000 5 0 2 1 6000 4000 6 5 10 20 50 100 200 1 2 3 4 TA = −55°C 300 TA = 155°C TA = 25°C TA = −55°C 1 10 100 1000 1 200 400 600 800 1000 1200 155°C 25°C Figure 4. Diode Capacitance VR, REVERSE VOLTAGE (V) 6 5 4 3 2 1 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 8 7 Figure 5. Maximum Non−repetitive Peak Forward Current as a Function of Pulse Duration, Typical Values Tp (mSec) 1 0.1 0.01 0.001 0 5 10 15 20 25 10 Based on square wave currents TJ = 25°C prior to surge |
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