| 数据搜索系统,热门电子元器件搜索 |
|
12P10G-S08-R 数据表(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
|
|
|||||||||||||||||||||||||||||
12P10G-S08-R 数据表(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
|
3 / 4 page ![]() www.doingter.cn — 3 — Drain-Source Diode Characteristics IS Continuous Source Current VG=VD=0V , Force Current --- --- -1.8 A ISM Pulsed Source Current --- --- -3.6 A VSD Drain Diode Forward Voltage VGS=0V,IS=-1A, TJ=25℃ --- --- -1 V trr Reverse Recovery Time VR=-100V,IS=-1A, di/dt=100A/μS, TJ=25℃ --- 13 --- ns Qrr Reverse Recovery Charge --- 15 --- nC Notes: Typical Characteristics: (TC=25℃ unless otherwise noted) 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. 12P10G-S08-R |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |