12P10G-S08-R datasheet(1/4 Pages) DOINGTER

部件名	12P10G-S08-R

功能描述	P-Channel MOSFET uses advanced trench technology

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制造商	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

网页	http://www.doingter.cn/

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Description：

This P-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=-100V,ID=-1.8A,RDS(ON)<200mΩ@VGS=-10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

-100

V

VGS

Gate-Source Voltage

±

20

V

ID

Continuous Drain Current-(TA=25℃)

-1.8

A

Continuous Drain Current-(TA=70℃)

-1.4

Pulsed Drain Current1

-7.2

A

PD

Power Dissipation-(TA=25℃)

2

W

Power Dissipation -Derate above 25℃

0.016

W/℃

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJA

Thermal Resistance,Junction to Ambient

62.5

℃

/ W

G

D

S

12P10G-S08-R

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制造商	部件名	数据表	功能描述
Unisonic Technologies	12P10G-S08-R	289Kb / 7P	P-CHANNEL POWER MOSFET

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