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12P10G-S08-R 数据表(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

部件名 12P10G-S08-R
功能描述  P-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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制造商  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
网页  http://www.doingter.cn/
标志 DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

12P10G-S08-R 数据表(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(TJ=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
-100
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=-100V, TJ=25℃
---
---
-1
μ
A
VDS=-80V , VGS=0V , TJ=125℃
---
---
-10
μ
A
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±
100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
-1.2
-1.6
-2.5
V
RDS(ON)
Drain-Source On Resistance
VGS=-10V,ID=-1.8A
---
165
200
mΩ
VGS=-4.5V,ID=-1.5A
---
180
230
GFS
Forward Transconductance
VDS=-10V, IS=-3A
---
6.5
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=-50V, VGS=0V, f=1MHz
---
1455
2200
pF
Coss
Output Capacitance
---
860
1300
Crss
Reverse Transfer Capacitance
---
60
85
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
16
---
Ω
Switching Characteristics,
td(on)
Turn-On Delay Time2,3
VDD=-50V, VGS=-10V
RG=25Ω,ID=1.8A
---
18
36
ns
tr
Rise Time2,3
---
8
16
ns
td(off)
Turn-Off Delay Time2,3
---
100
200
ns
tf
Fall Time2,3
---
30
60
ns
Qg
Total Gate Charge2,3
VDS=-80V , VGS=-10V ,
ID=-1.8A
---
20
40
nC
Qgs
Gate-Source Charge2,3
---
3.5
7
nC
Qgd
Gate-Drain Charge2,3
---
4.6
9
nC
12P10G-S08-R



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