20N15L-TN3-R datasheet(3/5 Pages) DOINGTER

部件名	20N15L-TN3-R

功能描述	N-Channel MOSFET uses advanced SGT technology

PDF	5 Pages

Scroll/Zoom	100%

制造商	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

网页	http://www.doingter.cn/

标志

3 / 5 page

www.doingter.cn

—

3 —

qrr

Reverse Recovery Charge

176

---

Notes:

Typical Characteristics： (T

C=25℃ unless otherwise noted)

dlSD/dt = 100 A/μs

Pulse width

 300

s, duty cycle  2 %

** Mounted on Large Heat Sink

*** limited by bonding wire

a : Pulse test ; pulse width

 300

s, duty cycle  2%

b : Guaranteed by design, not subject to production testing

Power Capability

Current Capability

Tmp – Mounting Point Temp. (°C)

Safe Operating Area

Transient Thermal Impedance

VDS - Drain-Source Voltage (V)

Square Wave Pulse Duration (sec)

100 120 140 160

=25

oC,V

=10V

0.01

0.1

100

800

0.1

100

200

300us

1ms

=25

10ms

100ms

80 100 120 140 160 180

=25

1E-4

1E-3

0.01

0.1

100

1E-3

0.01

0.1

0.02

Mounted on 1in

2 pad

JC :2.5

oC/W

0.01

0.05

0.1

0.2

Single Pulse

Duty = 0.5

20N15L-TN3-R

20N15L-TN3-R 数据表(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

20N15L-TN3-R 数据表(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Html Pages

1 2 3 4 5

数据表下载

链接网址

20N15L-TN3-R 数据表(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

20N15L-TN3-R 数据表(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Html Pages

1 2 3 4 5

数据表 下载

链接网址

数据表下载