20N15L-TN3-R datasheet(1/5 Pages) DOINGTER

部件名	20N15L-TN3-R

功能描述	N-Channel MOSFET uses advanced SGT technology

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制造商	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

网页	http://www.doingter.cn/

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Description：

This N-Channel MOSFET uses advanced SGT technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=150V,ID=20A,RDS(ON)<55mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

150

V

VGS

Gate-Source Voltage

±20

V

ID

*

Continuous Drain Current-TC=25℃

20

A

Continuous Drain Current-TC=100℃

12

Pulsed Drain Current

76

IS

20

A

PD

Power Dissipation

50

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

**

Thermal Resistance,Junction to Case

50

℃/W

RƟJA

**

Thermal Resistance,Junction to Ambient

2.5

D

S

G

Continuous-Source Current

20N15L-TN3-R

类似零件编号 - 20N15L-TN3-R

制造商	部件名	数据表	功能描述
Unisonic Technologies	20N15L-TN3-R	187Kb / 4P	20A, 150V N-CHANNEL POWER MOSFET

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