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20N15L-TN3-R 数据表(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

部件名 20N15L-TN3-R
功能描述  N-Channel MOSFET uses advanced SGT technology
PDF  5 Pages
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制造商  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
网页  http://www.doingter.cn/
标志 DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

20N15L-TN3-R 数据表(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  20N15L-TN3-R Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 20N15L-TN3-R Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 20N15L-TN3-R Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 20N15L-TN3-R Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 20N15L-TN3-R Datasheet HTML 5Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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A, V
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—
2 —
Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
150
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=120V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±25V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
2
---
4
V
RDS(ON)
a
Drain-Source On Resistance
VGS=10V,ID=10A
---
49
55
mΩ
VGS=6V,ID=4A
---
53
65
Dynamic Characteristics
b
Ciss
Input Capacitance
VDS=75V, VGS=0V, f=1MHz
---
1041
---
pF
Coss
Output Capacitance
---
67
---
Crss
Reverse Transfer Capacitance
---
31
---
Switching Characteristics
b
td(on)
Turn-On Delay Time
VDs=75V, ID=10A,
VGS=10V,RGEN=4.5Ω
RL=7.5Ω
---
9
--
ns
tr
Rise Time
---
34
---
ns
td(off)
Turn-Off Delay Time
---
13.6
---
ns
tf
Fall Time
---
36.8
---
ns
Qg
Total Gate Charge
VGS=10V, VDS=75V,
ID=10A
---
16.4
---
nC
Qgs
Gate-Source
Charge
---
6.2
---
nC
Qgd
Gate-Drain “Miller” Charge
---
2.7
---
nC
Drain-Source Diode Characteristics
VSD
a
Source-Drain Diode Forward Voltage
2
VGS=0V,IS=10A
---
---
1.3
V
trr
Reverse Recovery Time
---
79
---
Ns
IDS = 4
GS= 0 V
20N15L-TN3-R



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