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UT40N03TL-TN3-R 数据表(PDF) 5 Page - VBsemi Electronics Co.,Ltd

部件名 UT40N03TL-TN3-R
功能描述  N-Channel 30-V (D-S) MOSFET
PDF  8 Pages
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.com
标志 VBSEMI - VBsemi Electronics Co.,Ltd

UT40N03TL-TN3-R 数据表(HTML) 5 Page - VBsemi Electronics Co.,Ltd

  UT40N03TL-TN3-R Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd UT40N03TL-TN3-R Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd UT40N03TL-TN3-R Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd UT40N03TL-TN3-R Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd UT40N03TL-TN3-R Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd UT40N03TL-TN3-R Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd UT40N03TL-TN3-R Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd UT40N03TL-TN3-R Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
*The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
50
100
150
200
250
300
0
25
50
75
100
125
150
175
TC - Case Temperature (°C)
Package Limited
Power Derating
0
50
100
150
200
250
300
0
25
50
75
100
125
150
175
C - Case Temperature (°C)
T
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10- 4
10- 3
10- 2
10- 1
1
10
0.2
0.1
Duty Cycle = 0.5
Single Pulse
0.05
0.02
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
UT40N03TL-TN3-R
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