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UT40N03TL-TN3-R 数据表(PDF) 3 Page - VBsemi Electronics Co.,Ltd

部件名 UT40N03TL-TN3-R
功能描述  N-Channel 30-V (D-S) MOSFET
PDF  8 Pages
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.com
标志 VBSEMI - VBsemi Electronics Co.,Ltd

UT40N03TL-TN3-R 数据表(HTML) 3 Page - VBsemi Electronics Co.,Ltd

  UT40N03TL-TN3-R Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd UT40N03TL-TN3-R Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd UT40N03TL-TN3-R Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd UT40N03TL-TN3-R Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd UT40N03TL-TN3-R Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd UT40N03TL-TN3-R Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd UT40N03TL-TN3-R Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd UT40N03TL-TN3-R Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
0
15
30
45
60
75
90
0.0
0.5
1.0
1.5
2.0
2.5
VGS = 10 V thru 4 V
VDS - Drain-to-Source Voltage (V)
VGS = 2 V
VGS = 3 V
0
100
200
300
400
500
600
0
1020
3040
5060
70
8090
ID - Drain Current (A)
TC = - 55 °C
TC = 25 °C
TC = 125 °C
0
00
1000
1500
2000
2500
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Ciss
Coss
Crss
Transfer Characteristics
RDS(on) vs. Drain Current
Gate Charge
0.0
0.6
1.2
1.8
2.4
3.0
012
34
VGS - Gate-to-Source Voltage (V)
TC = 25 °C
TC = - 55 °C
TC = 125 °C
0.00
0.0
05
0.0
10
0.0
0.0
0
0.0
25
0.0
0
153045
607590
ID - Drain Current (A)
VGS = 10 V
VGS = 4.5 V
0
2
4
6
8
10
0
306090
120
150
180
Qg - Total Gate Charge (nC)
ID = 21.8 A
VDS = 24 V
VDS = 15 V
1
5
2
3
0
5
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
UT40N03TL-TN3-R
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