UT40N03TL-TN3-R datasheet(1/8 Pages) VBSEMI

部件名	UT40N03TL-TN3-R

功能描述	N-Channel 30-V (D-S) MOSFET

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制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

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N-Channel 30-V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET

•

100 % Rg and UIS Tested

•

Compliant to RoHS Directive 2011/65/EU

APPLICATIONS

•

OR-ing

•

Server

•DC/DC

Notes:

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 sec.

d. Maximum under steady state conditions is 90 °C/W.

e. Calculated based on maximum junction temperature. Package limitation current is 90 A.

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

ID (A)

a, e

Qg (Typ)

30

0.0

07 at VGS = 10 V

25 nC

0.009 at VGS = 4.5 V

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 175 °C)

TC = 25 °C

ID

A

TC = 70 °C

40

TA = 25 °C

.8b, c

TA = 70 °C

1 b, c

Pulsed Drain Current

IDM

200

Avalanche Current Pulse

L = 0.1 mH

IAS

3

9

Single Pulse Avalanche Energy

EAS

94.8

mJ

Continuous Source-Drain Diode Current

TC = 25 °C

IS

50a, e

A

TA = 25 °C

3.13b, c

Maximum Power Dissipation

TC = 25 °C

PD

100a

W

TC = 70 °C

75

TA = 25 °C

3.25b, c

TA = 70 °C

2.33b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typ.

Max.

Unit

Maximum Junction-to-Ambientb, d

t

 10 sec

RthJA

32

40

°C/W

Maximum Junction-to-Case

Steady State

RthJC

0.5

0.6

4

0

2

1

D

G

S

N-Channel MOSFET

5

0

5

0

8

TO-252

S

GD

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UT40N03TL-TN3-R

1

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