MODEL: M2MNV

M2MNV SPECIFICATIONS

ES-5095 Rev.9 Page 2/6

http://www.m-system.co.jp/

ON resistance: ≤ 50 Ω per wire

(ON resistance of photo MOSFET relay)

■ Output

Current signal input (no receiving resistor):

Equal to the input signal

Current signal input (receiving resistor 50 Ω):

Voltage signal equal to [Current × 50 Ω]

Voltage signal input: Equal to the input signal

■ Switching Command: Relay or open collector

Contact detecting: 5 V DC / 1 mA

Detecting levels: ≤ 1 kΩ at ON / ≥ 10 kΩ at OFF

INSTALLATION

Power Consumption

•AC:

Approx. 3 VA at 100 V

Approx. 4 VA at 200 V

Approx. 5 VA at 264 V

•DC: Approx. 2 W

Operating temperature: -5 to +55°C (23 to 131°F)

Operating humidity: 30 to 90 %RH (non-condensing)

Mounting: Surface or DIN rail

Weight: 150 g (0.33 lb)

PERFORMANCE in percentage of span

Accuracy: ±0.1 % (input code 2)

Temp. coefficient: ±0.010 %/°C (±0.006 %/°F) (input code

2)

Switching response time: ≤ 5 msec.

Leakage current at open circuit: ≤ 1 μA

Line voltage effect: ±0.1 % over voltage range

Insulation resistance: ≥ 100 MΩ with 500 V DC

Dielectric strength:

2000 V AC @1 minute

(switching command contact to power to ground)

2000 V AC @1 minute

(signal channel to power to ground)

1500 V AC @1 minute

(signal channel to switching command contact)

STANDARDS & APPROVALS

EU conformity:

EMC Directive

EMI EN 61000-6-4

EMS EN 61000-6-2

Low Voltage Directive

EN 61010-1

Installation Category II

Pollution Degree 2

Signal channel or switching command contact to power:

Reinforced insulation (300 V)

Signal channel to switching command contact: Basic

insulation (300 V)

RoHS Directive

EN 50581