UT3P01ZG-AE2-R datasheet(4/7 Pages) VBSEMI

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TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage Variance Over Temperature

1.2

1.5

100

1000

0.00

0.3

0.6

0.9

TJ = 25 °C

TJ = 125 °C

VSD - Source-to-Drain Voltage (V)

TJ = - 55 °C

VGS = 0 V

- 0.3

- 0.2

- 0.1

- 0.0

0.1

0.2

0.3

0.4

0.5

- 50

- 25

100

125

150

ID = 250 µA

TJ - Junction Temperature (°C)

On-Resistance vs. Gate-Source Voltage

Single Pulse Power, Junction-to-Ambient

0246

VGS - Gate-to-Source Voltage (V)

ID = 500 mA

ID = 200 mA

0.01

2.5

100

600

0.1

Time (s)

1.5

0.5

TA = 25 °C

Normalized Thermal Transient Impedance, Junction-to-Ambient

10-3

10-2

10-1

10-4

100

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 350 °C/W

3. TJM - TA = PDMZthJA(t)

Notes:

4. Surface Mounted

PDM

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UT3P01ZG-AE2-R

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