UT3P01ZG-AE2-R datasheet(2/7 Pages) VBSEMI

2 / 7 page

Notes:

a. Pulse test: PW

 300 µs duty cycle  2 %.

b. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Limits

Unit

Min.

Typ.a

Max.

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 10 µA

- 60

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 1

- 3

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 10

µA

VDS = 0 V, VGS = ± 10 V

± 200

VDS = 0 V, VGS = ± 10 V, TJ = 85 °C

± 500

VDS = 0 V, VGS = ± 5 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = - 60 V, VGS = 0 V

- 25

VDS = - 60 V, VGS = 0 V, TJ = 85 °C

- 250

On-State Drain Currenta

ID(on)

VGS = - 10 V, VDS = - 4.5 V

- 50

VGS = - 10 V, VDS = - 10 V

- 600

Drain-Source On-Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 25 mA



VGS = - 10 V, ID = - 100 mA

VGS = - 10 V, ID = - 100 mA, TJ =125 °C

Forward Transconductancea

gfs

VDS = - 10 V, ID = - 100 mA

Diode Forward Voltage

VSD

IS = - 100 mA, VGS = 0 V

- 1.4

Dynamic

Total Gate Charge

VDS = - 30 V, VGS = - 15 V

ID  - 100 mA

2.0

Gate-Source Charge

Qgs

1.2

Gate-Drain Charge

Qgd

0.8

Input Capacitance

Ciss

VDS = - 25 V, VGS = 0 V

f = 1 MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switchingb

Turn-On Time

td(on)

VDD = - 25 V, RL = 150 

ID  - 200 mA, VGEN = - 10 V, Rg = 10 

Turn-Off Time

td(off)

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